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BSC500N20NS3GATMA1
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1580pF @ 100V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
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Tel: 81-6-4560-9109
E-mail: yuko@eitocorp.co